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| Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 R0.9 R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 400 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Power gain Common base reverse transfer capacitance Common emitter reverse transfer capacitance Base time constant (Ta=25C) Symbol VCBO VEBO hFE VBE fT* PG Crb Cre rbb' * CC Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -1mA, f = 100MHz VCB = 6V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 31.9MHz 600 min 30 3 25 720 1200 20 0.8 1.5 25 1600 mV MHz dB pF pF ps typ max Unit V V *f T Rank classification Rank fT T 600 ~ 1300 S 900 ~ 1600 1.250.05 s Absolute Maximum Ratings (Ta=25C) 0.550.1 0.450.05 4.10.2 4.50.1 7 1 Transistor PC -- Ta 500 24 Ta=25C IB=300A 20 20 250A 16 200A 12 2SC2636 IC -- VCE 24 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 18 400 16 300 150A 12 200 8 100A 8 100 4 50A 4 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 150 300 450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE 400 VCE=10V Ta=25C 350 50 60 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C VCE=10V VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Ta=75C 40 Base current IB (A) 300 250 200 150 100 50 0 0 0.6 1.2 1.8 -25C 30 20 Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 10 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 240 VCE=10V 1600 1400 fT -- I E Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) VCE=10V 6V 2.0 1200 1000 800 600 400 200 160 Ta=75C 120 25C -25C 1.6 1.2 80 0.8 40 0.4 0 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Zrb -- IE 120 40 f=2MHz Ta=25C 100 35 f=100MHz Rg=50 Ta=25C 2SC2636 PG -- IE 12 VCE=10V f=100MHz Rg=50k Ta=25C NF -- IE Reverse transfer impedance Zrb () 10 VCE=10V 6V 80 Noise figure NF (dB) -100 Power gain PG (dB) 30 25 20 15 10 5 0 - 0.1 - 0.3 8 60 6 40 4 20 VCE=6V 10V 2 0 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) bib -- gib 0 0 brb -- grb 48 yrb=grb+jbrb VCB=10V 200 300 500 bfb -- gfb Forward transfer susceptance bfb (mS) yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=-5mA 32 -2mA 24 500 600 16 300 yib=gib+jbib VCB=10V Input susceptance bib (mS) -10 -20 IE=-2mA f=900MHz -5mA 600 500 300 200 Reverse transfer susceptance brb (mS) - 0.4 - 0.8 600 -1.2 f=900MHz -2mA -1.6 IE=-5mA -30 -40 -50 -2.0 8 900 -60 0 10 20 30 40 50 -2.4 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 0 -60 -40 -20 0 20 40 Input conductance gib (mS) Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) bob -- gob 12 yob=gob+jbob VCE=10V 900 Output susceptance bob (mS) 10 600 IE=-2mA 6 500 -5mA 8 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3 |
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